Computational study of strain-engineered III–V tunneling transistors

Bibliographic Details
Title: Computational study of strain-engineered III–V tunneling transistors
Authors: Huang, Jun Z., Yu Wang, Pengyu Long, Yaohua Tan, Povolotskyi, Michael, Klimeck, Gerhard
Source: 2016 Progress in Electromagnetic Research Symposium (PIERS) Progress in Electromagnetic Research Symposium (PIERS). :2604-2604 Aug, 2016
Relation: 2016 Progress in Electromagnetic Research Symposium (PIERS)
Database: IEEE Xplore Digital Library