Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates
| Title: | Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates |
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| Authors: | Song, B., Sensale-Rodriguez, B., Wang, R., Guo, J., Hu, Z., Yue, Y., Faria, F., Schuette, M., Ketterson, A., Beam, E., Saunier, P., Gao, X., Guo, S., Fay, P., Jena, D., Xing, H. G. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 61(3):747-754 Mar, 2014 |
| Database: | IEEE Xplore Digital Library |
| ISSN: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2014.2299810 |
| Published in: | IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices |