Bibliographic Details
| Title: |
Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs |
| Authors: |
Sasaki, Y., Godet, L., Chiarella, T., Brunco, D. P., Rockwell, T., Lee, J. W., Colombeau, B., Togo, M., Chew, S. A., Zschaetszch, G., Noh, K. B., De Keersgieter, A., Boccardi, G., Kim, M. S., Hellings, G., Martin, P., Vandervorst, W., Thean, A., Horiguchi, N. |
| Source: |
2013 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2013 IEEE International. :20.6.1-20.6.4 Dec, 2013 |
| Relation: |
2013 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |
