Bibliographic Details
| Title: |
InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V) |
| Authors: |
Chang, S. W., Li, Xu, Oxland, R., Wang, S. W., Wang, C. H., Contreras-Guerrero, R., Bhuwalka, K. K., Doornbos, G., Vasen, T., Holland, M. C., Vellianitis, G., van Dal, M. J. H., Duriez, B., Edirisooriya, M., Rojas-Ramirez, J. S, Ramvall, P., Thoms, S., Peralagu, U., Hsieh, C. H., Chang, Y. S., Yin, K. M., Lind, E., Wernersson, L.-E., Droopad, R., Thayne, I., Passlack, M., Diaz, C. H. |
| Source: |
2013 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2013 IEEE International. :16.1.1-16.1.4 Dec, 2013 |
| Relation: |
2013 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |
