0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications
| Title: | 0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications |
|---|---|
| Authors: | Lee, Kyungho, Jeon, Haeung, Cho, Byunghee, Cho, Joonhee, Pang, Yon-Sup, Moon, Jinwoo, Kwon, Susanna, Hebert, Francois, Lee, Junghwan, Lee, Taejong |
| Source: | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on. :163-166 May, 2013 |
| Relation: | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| Database: | IEEE Xplore Digital Library |
Be the first to leave a comment!