0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications
| Title: | 0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications |
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| Authors: | Lee, Kyungho, Jeon, Haeung, Cho, Byunghee, Cho, Joonhee, Pang, Yon-Sup, Moon, Jinwoo, Kwon, Susanna, Hebert, Francois, Lee, Junghwan, Lee, Taejong |
| Source: | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on. :163-166 May, 2013 |
| Relation: | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| Database: | IEEE Xplore Digital Library |
| ISBN: | 9781467351348 9781467351355 9781467351362 |
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| ISSN: | 10636854 19460201 |
| DOI: | 10.1109/ISPSD.2013.6694454 |
| Published in: | 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on |