A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time

Bibliographic Details
Title: A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time
Authors: Chang, Meng-Fan, Wu, Che-Wei, Kuo, Chia-Cheng, Shen, Shin-Jang, Lin, Ku-Feng, Yang, Shu-Meng, King, Ya-Chin, Lin, Chorng-Jung, Chih, Yu-Der
Source: 2012 IEEE International Solid-State Circuits Conference Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International. :434-436 Feb, 2012
Relation: 2012 IEEE International Solid- State Circuits Conference - (ISSCC)
Database: IEEE Xplore Digital Library
More Details
ISBN:9781467303767
9781467303743
9781467303750
9781467303774
ISSN:01936530
23768606
DOI:10.1109/ISSCC.2012.6177079
Published in:2012 IEEE International Solid-State Circuits Conference, Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International