Chiu, J. P., Chung, Y. T., Wang, T., Chen, M., Lu, C. Y., & Yu, K. F. (2012). A Comparative Study of NBTI and RTN Amplitude Distributions in High- $\kappa$ Gate Dielectric pMOSFETs. IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett., 33(2), 176-178. https://doi.org/10.1109/LED.2011.2176912
Chicago Style (17th ed.) CitationChiu, J. P., Y. T. Chung, T. Wang, M.-C Chen, C. Y. Lu, and K. F. Yu. "A Comparative Study of NBTI and RTN Amplitude Distributions in High- $\kappa$ Gate Dielectric PMOSFETs." IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. 33, no. 2 (2012): 176-178. https://doi.org/10.1109/LED.2011.2176912.
MLA (8th ed.) CitationChiu, J. P., et al. "A Comparative Study of NBTI and RTN Amplitude Distributions in High- $\kappa$ Gate Dielectric PMOSFETs." IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett., vol. 33, no. 2, 2012, pp. 176-178, https://doi.org/10.1109/LED.2011.2176912.
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