A Comparative Study of NBTI and RTN Amplitude Distributions in High- $\kappa$ Gate Dielectric pMOSFETs

Bibliographic Details
Title: A Comparative Study of NBTI and RTN Amplitude Distributions in High- $\kappa$ Gate Dielectric pMOSFETs
Authors: Chiu, J. P., Chung, Y. T., Wang, T., Chen, M.-C., Lu, C. Y., Yu, K. F.
Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 33(2):176-178 Feb, 2012
Database: IEEE Xplore Digital Library