Analysis and Design of Nanoscale CMOS Storage Elements for Single-Event Hardening With Multiple-Node Upset

Bibliographic Details
Title: Analysis and Design of Nanoscale CMOS Storage Elements for Single-Event Hardening With Multiple-Node Upset
Authors: Lin, S., Kim, Y.-B., Lombardi, F.
Source: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 12(1):68-77 Mar, 2012
Database: IEEE Xplore Digital Library