Reduction of efficiency droop in Semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates

Bibliographic Details
Title: Reduction of efficiency droop in Semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates
Authors: Chiu, C. H., Lin, D. W., Lin, C. C., Li, Z. Y., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., Sawaki, N.
Source: CLEO: 2011 - Laser Science to Photonic Applications Lasers and Electro-Optics (CLEO), 2011 Conference on. :1-2 May, 2011
Relation: 2011 Conference on Lasers and Electro-Optics (CLEO)
Database: IEEE Xplore Digital Library