High Vgs MOSFET characteristics with thin gate oxide for PMIC application

Bibliographic Details
Title: High Vgs MOSFET characteristics with thin gate oxide for PMIC application
Authors: Cha, Jaehan, Lee, Kyungho, Kim, Sungoo, Kim, Juho, Park, Namkyu, Lee, Taejong
Source: 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on. :211-214 May, 2011
Relation: 2011 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Database: IEEE Xplore Digital Library