Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
| Title: | Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications |
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| Authors: | Saadat, O. I., Chung, J. W., Piner, E. L., Palacios, T. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 30(12):1254-1256 Dec, 2009 |
| Database: | IEEE Xplore Digital Library |
| ISSN: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2009.2032938 |
| Published in: | IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. |