Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
| Title: | Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond |
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| Authors: | Kawasaki, H., Khater, M., Guillorn, M., Fuller, N., Chang, J., Kanakasabapathy, S., Chang, L., Muralidhar, R., Babich, K., Yang, Q., Ott, J., Klaus, D., Kratschmer, E., Sikorski, E., Miller, R., Viswanathan, R., Zhang, Y., Silverman, J., Ouyang, Q., Yagishita, A., Takayanagi, M., Haensch, W., Ishimaru, K. |
| Source: | 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008 |
| Relation: | 2008 IEEE International Electron Devices Meeting (IEDM) |
| Database: | IEEE Xplore Digital Library |
| ISBN: | 9781424423774 9781424423781 |
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| ISSN: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2008.4796661 |
| Published in: | 2008 IEEE International Electron Devices Meeting, Electron Devices Meeting, 2008. IEDM 2008. IEEE International |