Time-Dependent Dielectric Breakdown of $\hbox{La}_{2} \hbox{O}_{3}$-Doped High-$k$/Metal Gate Stacked NMOSFETs
| Title: | Time-Dependent Dielectric Breakdown of $\hbox{La}_{2} \hbox{O}_{3}$-Doped High-$k$/Metal Gate Stacked NMOSFETs |
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| Authors: | Han, I.-S., Choi, W.-H., Kwon, H.-M., Na, M.-K., Zhang, Y.-Y., Kim, Y.-G., Wang, J.-S., Kang, C. Y., Bersuker, G., Lee, B. H., Jeong, Y. H., Lee, H.-D., Jammy, R. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 30(3):298-301 Mar, 2009 |
| Database: | IEEE Xplore Digital Library |
| ISSN: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2008.2012272 |
| Published in: | IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. |