NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics

Bibliographic Details
Title: NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics
Authors: Thareja, G., Wen, H.C., Harris, R., Majhi, P., Lee, B.H., Lee, J.C.
Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 27(10):802-804 Oct, 2006
Database: IEEE Xplore Digital Library