NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics
Title: | NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics |
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Authors: | Thareja, G., Wen, H.C., Harris, R., Majhi, P., Lee, B.H., Lee, J.C. |
Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 27(10):802-804 Oct, 2006 |
Database: | IEEE Xplore Digital Library |
ISSN: | 07413106 15580563 |
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DOI: | 10.1109/LED.2006.882521 |
Published in: | IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. |