Bibliographic Details
| Title: |
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL |
| Authors: |
Lee, W.-H., Waite, A., Nii, H., Nayfeh, H.M., McGahay, V., Nakayama, H., Fried, D., Chen, H., Black, L., Bolam, R., Cheng, J., Chidambarrao, D., Christiansen, C., Cullinan-Scholl, M., Davies, D.R., Domenicucci, A., Fisher, P., Fitzsimmons, J., Gill, J., Gribelyuk, M., Harmon, D., Holt, J., Ida, K., Kiene, M., Kluth, J., Labelle, C., Madan, A., Malone, K., McLaughlin, P.V., Minami, M., Mocuta, D., Murphy, R., Muzzy, C., Newport, M., Panda, S., Peidous, I., Sakamoto, A., Sato, T., Sudo, G., VanMeer, H., Yamashita, T., Zhu, H., Agnello, P., Bronner, G., Freeman, G., Huang, S.-F., Ivers, T., Luning, S., Miyamoto, K., Nye, H., Pellerin, J., Rim, K., Schepis, D., Spooner, T., Chen, X., Khare, M., Horstmann, M., Wei, A., Kammler, T., Hontschel, J., Bierstedt, H., Engelmann, H.-J., Hellmich, A., Hempel, K., Koerner, G., Neu, A., Otterbach, R., Reichel, C., Trentsch, M., Press, P., Frohberg, K., Schaller, M., Salz, H., Hohage, J., Ruelke, H., Klais, J., Raab, M., Greenlaw, D., Kepler, N. |
| Source: |
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :4 pp.-59 2005 |
| Relation: |
International Electron Devices Meeting 2005 |
| Database: |
IEEE Xplore Digital Library |
