Bibliographic Details
| Title: |
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI) |
| Authors: |
Cai, J., Rim, K., Bryant, A., Jenkins, K., Ouyang, C., Singh, D., Ren, Z., Lee, K., Yin, H., Hergenrother, J., Kanarsky, T., Kumar, A., Wang, X., Bedell, S., Reznicek, A., Hovel, H., Sadana, D., Uriarte, D., Mitchell, R., Ott, J., Mocuta, D., O'Neil, P., Mocuta, A., Leobandung, E., Miller, R., Haensch, W., Leong, M. |
| Source: |
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :165-168 2004 |
| Relation: |
2004 International Electron Devices Meeting |
| Database: |
IEEE Xplore Digital Library |
