Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL

Bibliographic Details
Title: Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
Authors: Edelstein, D., Rathore, H., Davis, C., Clevenger, L., Cowley, A., Nogami, T., Agarwala, B., Arai, S., Carbone, A., Chanda, K., Chen, F., Cohen, S., Cote, W., Cullinan, M., Dalton, T., Das, S., Davis, P., Demarest, J., Dunn, D., Dziobkowski, C., Filippi, R., Fitzsimmons, J., Flaitz, P., Gates, S., Gill, J., Grill, A., Hawken, D., Ida, K., Klaus, D., Klymko, N., Lane, M., Lane, S., Lee, J., Landers, W., Li, W.-K., Lin, Y.-H., Liniger, E., Liu, X.-H., Madan, A., Malhotra, S., Martin, J., Molis, S., Muzzy, C., Nguyen, D., Nguyen, S., Ono, M., Parks, C., Questad, D., Restaino, D., Sakamoto, A., Shaw, T., Shimooka, Y., Simon, A., Simonyi, E., Swift, A., Van Kleeck, T., Vogt, S., Wang, Y.-Y., Wille, W., Wright, J., Yang, C.-C., Yoon, M., Ivers, T.
Source: 2004 IEEE International Reliability Physics Symposium. Proceedings Reliability physics Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International. :316-319 2004
Relation: 2004 IEEE International Reliability Physics Symposium. Proceedings
Database: IEEE Xplore Digital Library