Investigation of hot carrier effects in n-MISFETs with HfSiON gate dielectric

Bibliographic Details
Title: Investigation of hot carrier effects in n-MISFETs with HfSiON gate dielectric
Authors: Takayanagi, M., Watanabe, T., Iijima, R., Ishimaru, K., Tsunashima, Y.
Source: 2004 IEEE International Reliability Physics Symposium. Proceedings Reliability physics Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International. :13-17 2004
Relation: 2004 IEEE International Reliability Physics Symposium. Proceedings
Database: IEEE Xplore Digital Library