Mechanism of Improving Al₂O₃/β-Ga₂O₃ Interface After Supercritical Fluid Process at a Low Temperature

Bibliographic Details
Title: Mechanism of Improving Al₂O₃/β-Ga₂O₃ Interface After Supercritical Fluid Process at a Low Temperature
Authors: Wen, Z., Yang, M., Yang, S., Li, S., Li, M., Zhou, L., Geng, L., Hao, Y.
Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(4):1669-1673 Apr, 2025
Database: IEEE Xplore Digital Library