Filament-Free Bulk RRAM with High Endurance and Long Retention for Neuromorphic Few-Shot Learning On-Chip

Bibliographic Details
Title: Filament-Free Bulk RRAM with High Endurance and Long Retention for Neuromorphic Few-Shot Learning On-Chip
Authors: Kumar, Ashwani, Zhou, Yucheng, Potladurthy, Sai Praneeth, Kim, Jeong-Hoon, Xu, Weihong, Ponzina, Flavio, Kim, Seonghyun, Cubukcu, Ertugrul, Rosing, Tajana, Cauwenberghs, Gert, Kuzum, Duygu
Source: 2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024
Relation: 2024 IEEE International Electron Devices Meeting (IEDM)
Database: IEEE Xplore Digital Library