Bibliographic Details
| Title: |
First Demonstration of 4-Layer Stacked Planar Channel-All-Around (P-CAA) IGZO FETs with Cost-Effective Process for High-Density 1T1C 3D DRAM |
| Authors: |
Ai, Xuezheng, Li, Weiwei, Gu, Chen, Chen, Chuanke, Duan, Xinlv, Lu, Congyan, Chen, Jianqi, Wang, Xiangsheng, Zhang, Kaiping, Dai, Jin, Liu, Mingxu, Niu, Jiebin, Huang, Chuanhui, Xiang, Jinjuan, Yu, Yong, Shao, Feng, Yang, Guanhua, Liu, Yu, Liu, Xiaomeng, Wang, Shaohua, Kang, Bok-Moon, Li, Gengfei, Zhao, Shenjie, Lu, Nianduan, Geng, Di, Wang, Guilei, Zhao, Chao, Li, Ling, Liu, Ming |
| Source: |
2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024 |
| Relation: |
2024 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |
