37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications
Title: | 37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications |
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Authors: | Nakasha, Y., Kumazaki, Y., Ozaki, S., Okamoto, N., Hara, N., Yamada, A., Ohki, T. |
Source: | IEEE Microwave and Wireless Technology Letters IEEE Microw. Wireless Tech. Lett. Microwave and Wireless Technology Letters, IEEE. 35(3):358-361 Mar, 2025 |
Database: | IEEE Xplore Digital Library |
ISSN: | 2771957X 27719588 |
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DOI: | 10.1109/LMWT.2025.3527934 |
Published in: | IEEE Microwave and Wireless Technology Letters, Microwave and Wireless Technology Letters, IEEE, IEEE Microw. Wireless Tech. Lett. |