37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications

Bibliographic Details
Title: 37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications
Authors: Nakasha, Y., Kumazaki, Y., Ozaki, S., Okamoto, N., Hara, N., Yamada, A., Ohki, T.
Source: IEEE Microwave and Wireless Technology Letters IEEE Microw. Wireless Tech. Lett. Microwave and Wireless Technology Letters, IEEE. 35(3):358-361 Mar, 2025
Database: IEEE Xplore Digital Library