High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion
| Title: | High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion |
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| Authors: | Cheng, Z., Li, X., Ji, J., Yu, L., Zhang, T., Wang, H., Jiang, X., Yuan, S., You, S., Chang, J., Hao, Y., Zhang, J. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 46(3):460-463 Mar, 2025 |
| Database: | IEEE Xplore Digital Library |
| ISSN: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2025.3528003 |
| Published in: | IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. |