Application of Surface Activated Bonding to Determine the Dislocation Generation Process at Asymmetric Grain Boundaries in Silicon

Bibliographic Details
Title: Application of Surface Activated Bonding to Determine the Dislocation Generation Process at Asymmetric Grain Boundaries in Silicon
Authors: Ohno, Yutaka, Saito, Hikaru, Liang, Jianbo, Shigekawa, Naoteru, Yokoi, Tatsuya, Matsunaga, Katsuyuki, Inoue, Koji, Nagai, Yasuyoshi, Hata, Satoshi
Source: 2024 8th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Low Temperature Bonding for 3D Integration (LTB-3D), 2024 8th International Workshop on. :1-1 Oct, 2024
Relation: 2024 8th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
Database: IEEE Xplore Digital Library