64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform

Bibliographic Details
Title: 64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform
Authors: Kandeel, A., Hiblot, G., Porret, C., Srinivasan, S.A., Shimura, Y., Loo, R., Berciano, M., Tseng, C.N., Malik, D., Milenin, A., Yudistira, D., Balakrishnan, S., Shahin, A., Vaskasi, J.R., Verheyen, P., Pantouvaki, M., Chakrabarti, M., Velenis, D., Ferraro, F., Ban, Y., Van Thourhout, D., Van Campenhout, J.
Source: Journal of Lightwave Technology J. Lightwave Technol. Lightwave Technology, Journal of. 43(6):2794-2802 Mar, 2025
Database: IEEE Xplore Digital Library