Modeling Row Hammer Effect in 3D Capacitor-less DRAM Using Triple-Gated Silicon Nanosheet Device

Bibliographic Details
Title: Modeling Row Hammer Effect in 3D Capacitor-less DRAM Using Triple-Gated Silicon Nanosheet Device
Authors: Son, Jimin, Park, Jun Young, Lee, Taeeun, Woo, Sola, Yu, Shimeng
Source: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2024 International Conference on. :1-4 Sep, 2024
Relation: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Database: IEEE Xplore Digital Library