Song, J., Wang, M., Wei, J., Fan, Z., Zhang, J., Yang, H., . . . Shen, B. (2024). Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs. IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett., 45(10), 1728-1731. https://doi.org/10.1109/LED.2024.3447236

Song, J., et al. "Effect of Source Electrostatic Interaction on the Off-State Leakage Current of P-GaN Gate HEMTs." IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. 45, no. 10 (2024): 1728-1731. https://doi.org/10.1109/LED.2024.3447236.

Song, J., et al. "Effect of Source Electrostatic Interaction on the Off-State Leakage Current of P-GaN Gate HEMTs." IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett., vol. 45, no. 10, 2024, pp. 1728-1731, https://doi.org/10.1109/LED.2024.3447236.