Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs
| Title: | Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs |
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| Authors: | Song, J., Wang, M., Wei, J., Fan, Z., Zhang, J., Yang, H., Wang, P., Xie, B., Li, C., Yuan, L., Shen, B. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(10):1728-1731 Oct, 2024 |
| Database: | IEEE Xplore Digital Library |
| ISSN: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2024.3447236 |
| Published in: | IEEE Electron Device Letters, Electron Device Letters, IEEE, IEEE Electron Device Lett. |