A Novel Quantitative Model for Combination Effects of Hydrogen and Process Heat on Peripheral Transistors in 3D-NAND Flash Memory

Bibliographic Details
Title: A Novel Quantitative Model for Combination Effects of Hydrogen and Process Heat on Peripheral Transistors in 3D-NAND Flash Memory
Authors: Lee, Dongjin, Lee, Yunjo, Na, Soyeong, Yun, KangOh, Baek, Sungkweon, Lee, Jaeduk, Jang, Jaehoon, Song, Jaihyuk
Source: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :P68.TX-1-P68.TX-5 Apr, 2024
Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)
Database: IEEE Xplore Digital Library