Bibliographic Details
| Title: |
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes |
| Authors: |
Lin, Ku-Feng, Noguchi, Hiroki, Shih, Yi-Chun, Yuh, Perng-Fei, Lee, Yuan-Jen, Chang, Tung-Cheng, Huang, Sheng-Po, Lin, Yu-Fan, Lee, Chun-Ying, Huang, Yen-Hsiang, Tsai, Jui-Che, Adham, Saman, Noel, Peter, Yazdi, Ramin, Gershoig, Marat, Shin, YangJae, Joshi, Vineet, Wong, Ted, Jiang, Meng-Ru, Wu, J. J., Cheng, Chun-Tai, Wang, Yu-Jen, Chuang, Harry, Chih, Yu-Der, Wang, Yih, Chang, Tsung-Yung Jonathan |
| Source: |
2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:292-294 Feb, 2024 |
| Relation: |
2024 IEEE International Solid-State Circuits Conference (ISSCC) |
| Database: |
IEEE Xplore Digital Library |
