High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies

Bibliographic Details
Title: High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies
Authors: Lee, Tsung-En, Chiang, Hung-Li, Chang, Chih-Yu, Su, Yuan-Chun, Chang, Shu-Jui, Wu, Jui-Jen, Lin, Bo-Jiun, Wang, Jer-Fu, Haw, Shu-Chih, Chiu, Shang-Jui, Ching, He-Liang, Lin, Yan-Gu, Yun, Wei-Sheng, Hsu, Chen-Feng, Lee, Hengyuan, Lee, Tung-Ying, Passlack, Matthias, Cheng, Chao-Ching, Chang, Chih-Sheng, Wong, H.-S. Philip, Chang, Wen-Hao, Chang, Meng-Fan, Lin, Yu-Ming, Radu, Iuliana P.
Source: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Relation: 2023 International Electron Devices Meeting (IEDM)
Database: IEEE Xplore Digital Library
More Details
ISBN:9798350327670
ISSN:2156017X
DOI:10.1109/IEDM45741.2023.10413873
Published in:2023 International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2023 International