Bibliographic Details
| Title: |
Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications |
| Authors: |
Das, Dipjyoti, Park, Hyeonwoo, Wang, Zekai, Zhang, Chengyang, Ravindran, Prasanna Venkatesan, Park, Chinsung, Afroze, Nashrah, Hsu, Po-Kai, Tian, Mengkun, Chen, Hang, Chern, Winston, Lim, Suhwan, Kim, Kwangsoo, Kim, Kijoon, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif |
| Source: |
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023 |
| Relation: |
2023 International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |
