Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy
Title: | Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy |
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Authors: | Ferdos, F., Shumin Wang, Yongqiang Wei, Larsson, A., Sadeghi, M., Qingxiang Zhao |
Source: | International Conference on Molecular Bean Epitaxy Molecular beam epitaxy Molecular Beam Epitaxy, 2002 International Conference on. :285-286 2002 |
Relation: | Proceedings of MBE-XII |
Database: | IEEE Xplore Digital Library |
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