Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy

Bibliographic Details
Title: Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy
Authors: Ferdos, F., Shumin Wang, Yongqiang Wei, Larsson, A., Sadeghi, M., Qingxiang Zhao
Source: International Conference on Molecular Bean Epitaxy Molecular beam epitaxy Molecular Beam Epitaxy, 2002 International Conference on. :285-286 2002
Relation: Proceedings of MBE-XII
Database: IEEE Xplore Digital Library