First-principles study of the conduction mechanism in tantala-based resistive memory devices

Bibliographic Details
Title: First-principles study of the conduction mechanism in tantala-based resistive memory devices
Authors: Lee, Juho, Kim, Seunghyun, Kim, Hyoseok, Hong, Sungduk, Kim, Sung Jin, Sin Kim, Dae, Woo, Myung Hun, Heon Kang, Joo, Park, Hyun-Mog, Ha, Daewon
Source: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2023 International Conference on. :197-200 Sep, 2023
Relation: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Database: IEEE Xplore Digital Library