Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT

Bibliographic Details
Title: Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT
Authors: Wang, M., Lv, Y., Zhou, H., Cui, P., Liu, C., Lin, Z.
Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(2):160-163 Feb, 2024
Database: IEEE Xplore Digital Library