Reservoir Computing for Temporal Data Processing Using Resistive Switching Memory Devices Based on ITO Treated With O2 Plasma

Bibliographic Details
Title: Reservoir Computing for Temporal Data Processing Using Resistive Switching Memory Devices Based on ITO Treated With O2 Plasma
Authors: Lee, J., Kwon, O., Jeon, B., Kim, S.
Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(11):5651-5656 Nov, 2023
Database: IEEE Xplore Digital Library