Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

Bibliographic Details
Title: Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate
Authors: Jia, Mao, Hou, Bin, Jia, Fu-Chun, Yang, Ling, Ao, Jin-Ping, Ma, Xiao-Hua
Source: 2022 10th International Symposium on Next-Generation Electronics (ISNE) Next-Generation Electronics (ISNE), 2022 10th International Symposium on. :1-3 May, 2023
Relation: 2022 10th International Symposium on Next-Generation Electronics (ISNE)
Database: IEEE Xplore Digital Library