Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate
Title: | Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate |
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Authors: | Jia, Mao, Hou, Bin, Jia, Fu-Chun, Yang, Ling, Ao, Jin-Ping, Ma, Xiao-Hua |
Source: | 2022 10th International Symposium on Next-Generation Electronics (ISNE) Next-Generation Electronics (ISNE), 2022 10th International Symposium on. :1-3 May, 2023 |
Relation: | 2022 10th International Symposium on Next-Generation Electronics (ISNE) |
Database: | IEEE Xplore Digital Library |
ISBN: | 9781665455251 |
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ISSN: | 23788607 |
DOI: | 10.1109/ISNE56211.2023.10221606 |
Published in: | 2022 10th International Symposium on Next-Generation Electronics (ISNE), Next-Generation Electronics (ISNE), 2022 10th International Symposium on |