Scaled contact length with low contact resistance in monolayer 2D channel transistors

Bibliographic Details
Title: Scaled contact length with low contact resistance in monolayer 2D channel transistors
Authors: Wu, Wen-Chia, Hung, Terry Y.T., Sathaiya, D. Mahaveer, Fan, Dongxu, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Li, Weisheng, Yu, Zhihao, Qiu, Hao, Yang, Ying-Mei, Lin, Kuang-I, Shen, Yun-Yang, Chang, Wen-Hao, Liew, San Lin, Hou, Vincent, Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Philip Wong, H.-S., Wang, Xinran, Chien, Chao-Hsin, Cheng, Chao-Ching, Radu, Iuliana P.
Source: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Database: IEEE Xplore Digital Library