Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2
| Title: | Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2 |
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| Authors: | Huang, Z.-R., Wang, S.-M., Liu, C.-R., Chen, Y.-T., Tsai, Y.-T., Chen, Z.-K., Pai, C.-S., Tang, Y.-T. |
| Source: | 2023 Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2023. :47-48 Jun, 2023 |
| Relation: | 2023 Silicon Nanoelectronics Workshop (SNW) |
| Database: | IEEE Xplore Digital Library |
| ISBN: | 9784863488083 |
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| ISSN: | 21614644 |
| DOI: | 10.23919/SNW57900.2023.10183942 |
| Published in: | 2023 Silicon Nanoelectronics Workshop (SNW), Silicon Nanoelectronics Workshop (SNW), 2023 |