Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs
| Title: | Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs |
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| Authors: | Abhinay, S., Wu, W.-M., Shih, C.-A., Chen, S.-H., Sibaja-Hernandez, A., Parvais, B., Peralagu, U., Alian, A., Wu, T.-L., Ker, M.-D., Groeseneken, G., Collaert, N. |
| Source: | 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :30.7.1-30.7.4 Dec, 2022 |
| Relation: | 2022 IEEE International Electron Devices Meeting (IEDM) |
| Database: | IEEE Xplore Digital Library |
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