Bibliographic Details
| Title: |
Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs |
| Authors: |
Abhinay, S., Wu, W.-M., Shih, C.-A., Chen, S.-H., Sibaja-Hernandez, A., Parvais, B., Peralagu, U., Alian, A., Wu, T.-L., Ker, M.-D., Groeseneken, G., Collaert, N. |
| Source: |
2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :30.7.1-30.7.4 Dec, 2022 |
| Relation: |
2022 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |
