Bibliographic Details
| Title: |
Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping |
| Authors: |
Ruixing Feng, Felipe Kremer, David J. Sprouster, Sahar Mirzaei, Stefan Decoster, Chris J. Glover, Scott A. Medling, John Lundsgaard Hansen, Arne Nylandsted-Larsen, Salvy P. Russo, Mark C. Ridgway |
| Source: |
Materials Research Letters, Vol 5, Iss 1, Pp 29-34 (2017) |
| Publisher Information: |
Taylor & Francis Group, 2017. |
| Publication Year: |
2017 |
| Collection: |
LCC:Materials of engineering and construction. Mechanics of materials |
| Subject Terms: |
SiGe, C + In co-doping, X-ray absorption fine structure, Hall Effect, Materials of engineering and construction. Mechanics of materials, TA401-492 |
| More Details: |
In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2166-3831
21663831 |
| Relation: |
https://doaj.org/toc/2166-3831 |
| DOI: |
10.1080/21663831.2016.1169229 |
| Access URL: |
https://doaj.org/article/eefc4c9e29444e4d9b3ccf1b28c9ebff |
| Accession Number: |
edsdoj.fc4c9e29444e4d9b3ccf1b28c9ebff |
| Database: |
Directory of Open Access Journals |
