Bibliographic Details
| Title: |
Structure and Thermoelectric Characterization of p-Type SnTe Nanobulk Material Synthesized by Charge Compensation Chemical Reaction |
| Authors: |
Ryosuke Fujiwara, Yuta Ikeda, Takuto Kawaguchi, Yohei Takashima, Takaaki Tsuruoka, Kensuke Akamatsu |
| Source: |
Energies, Vol 17, Iss 1, p 190 (2023) |
| Publisher Information: |
MDPI AG, 2023. |
| Publication Year: |
2023 |
| Collection: |
LCC:Technology |
| Subject Terms: |
thermoelectric material, tin telluride, chemical precipitation, low lattice thermal conductivity, Technology |
| More Details: |
SnTe is the most widely studied p-type thermoelectric (TE) alternative to PbTe. In this study, we prepared a nanostructured SnTe bulk material via spark plasma sintering from a precursor synthesized by a chemical precipitation process without using organic molecules. The sintered sample comprised tiny grains (100–300 nm) with high-density grain boundaries. Eventually, because the material would contain no impurities acting as scattering nodes of charge carriers, the material exhibited a relatively high electrical conductivity of 7.07 × 105 Sm−1 at 310 K. The material demonstrated low lattice thermal conductivity (0.87 Wm−1K−1 at 764 K), which can be owing to the increasing phonon scattering at grain boundaries. The maximum ZT was 0.31 at 764 K in the measured temperature range. This study provides a method for the design of phase-pure and surfactant-free SnTe thermoelectric materials that exhibit low lattice thermal conductivity and high carrier mobility using a chemical synthetic approach. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
1996-1073 |
| Relation: |
https://www.mdpi.com/1996-1073/17/1/190; https://doaj.org/toc/1996-1073 |
| DOI: |
10.3390/en17010190 |
| Access URL: |
https://doaj.org/article/f4265965807d4305a83664836df3eba3 |
| Accession Number: |
edsdoj.f4265965807d4305a83664836df3eba3 |
| Database: |
Directory of Open Access Journals |
