Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications

Bibliographic Details
Title: Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications
Authors: Taehoon Kim, Woongki Lee, Soyeon Kim, Dong Chan Lim, Youngkyoo Kim
Source: Advanced Intelligent Systems, Vol 6, Iss 4, Pp n/a-n/a (2024)
Publisher Information: Wiley, 2024.
Publication Year: 2024
Collection: LCC:Computer engineering. Computer hardware
Subject Terms: artificial neural networks, charge trapping, flexible organic synaptic transistors, neuromorphic, water processable, Computer engineering. Computer hardware, TK7885-7895, Control engineering systems. Automatic machinery (General), TJ212-225
More Details: Neuromorphic devices, which can mimic the human body's neural system, are rising as an essential technology for artificial intelligence. Here, two types of organic synaptic transistors (OSTRs), OSTR‐A and OSTR‐B, are fabricated on either glass or polymer film using water‐processable charge‐trapping gate‐insulating layers that are prepared by reacting ethylenediamine (EDA) and poly(2‐acrylamido‐2‐methyl‐1‐propanesulfonic acid) (PAMPSA). OSTR‐A is designed to function as a basic artificial synapse by gate pulse stimulation only, while OSTR‐B has additional near‐infrared (NIR)‐absorbing conjugated polymer layers for further sensing of NIR light upon gate voltage stimulations. The PAMPSA:EDA films are found to contain permanent charge bridges (ion pairs of –SO3− +NH3‐) that play a charge‐trapping role in OSTRs. Both devices with the PAMPSA:EDA layers exhibit clear postsynaptic current (PSC) signals upon gate voltage pulses, leading to long‐term potentiation/depression characteristics. The flexible OSTR‐B devices can sense the NIR light (905 nm) upon gate pulse stimulation and their PSC signals are well maintained even after bending (>5000 times). Artificial neural network simulations disclose that the flexible OSTR‐B devices can stably perform synaptic operations under the NIR light with high accuracy (>90%) even after repeated bending (5000 times), indicative of potential use in artificial neuromorphic skin applications.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2640-4567
Relation: https://doaj.org/toc/2640-4567
DOI: 10.1002/aisy.202300651
Access URL: https://doaj.org/article/9565ed8e283d42a1aac2b0a30c6623dd
Accession Number: edsdoj.9565ed8e283d42a1aac2b0a30c6623dd
Database: Directory of Open Access Journals
More Details
ISSN:26404567
DOI:10.1002/aisy.202300651
Published in:Advanced Intelligent Systems
Language:English