Bibliographic Details
| Title: |
Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory |
| Authors: |
Ting-Yu Chang, Kuan-Chi Wang, Hsien-Yang Liu, Jing-Hua Hseun, Wei-Cheng Peng, Nicolò Ronchi, Umberto Celano, Kaustuv Banerjee, Jan Van Houdt, Tian-Li Wu |
| Source: |
Nanomaterials, Vol 13, Iss 14, p 2104 (2023) |
| Publisher Information: |
MDPI AG, 2023. |
| Publication Year: |
2023 |
| Collection: |
LCC:Chemistry |
| Subject Terms: |
ferroelectric, domain size, reliability, Chemistry, QD1-999 |
| More Details: |
In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO2 MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO2 MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO2 MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2079-4991 |
| Relation: |
https://www.mdpi.com/2079-4991/13/14/2104; https://doaj.org/toc/2079-4991 |
| DOI: |
10.3390/nano13142104 |
| Access URL: |
https://doaj.org/article/91fc261f328846a89ac69a003a88a21d |
| Accession Number: |
edsdoj.91fc261f328846a89ac69a003a88a21d |
| Database: |
Directory of Open Access Journals |
