| Title: |
Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory |
| Authors: |
Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, Jeong-Soo Lee |
| Source: |
Micromachines, Vol 14, Iss 12, p 2199 (2023) |
| Publisher Information: |
MDPI AG, 2023. |
| Publication Year: |
2023 |
| Collection: |
LCC:Mechanical engineering and machinery |
| Subject Terms: |
3-D NAND flash memory, cross-temperature, threshold voltage variation, decomposition, poly-Si channel, grain boundary, Mechanical engineering and machinery, TJ1-1570 |
| More Details: |
Electrical characteristics with various program temperatures (TPGM) in three-dimensional (3-D) NAND flash memory are investigated. The cross-temperature conditions of the TPGM up to 120 °C and the read temperature (TREAD) at 30 °C are used to analyze the influence of grain boundaries (GB) on the bit line current (IBL) and threshold voltage (VT). The VT shift in the E-P-E pattern is successfully decomposed into the charge loss (ΔVT,CL) component and the poly-Si GB (ΔVT,GB) component. The extracted ΔVT,GB increases at higher TPGM due to the reduced GB potential barrier. Additionally, the ΔVT,GB is evaluated using the Technology Computer Aided Design (TCAD) simulation, depending on the GB position (XGB) and the bit line voltage (VBL). |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2072-666X |
| Relation: |
https://www.mdpi.com/2072-666X/14/12/2199; https://doaj.org/toc/2072-666X |
| DOI: |
10.3390/mi14122199 |
| Access URL: |
https://doaj.org/article/916f84299e074bf8b253c9c6b0aea724 |
| Accession Number: |
edsdoj.916f84299e074bf8b253c9c6b0aea724 |
| Database: |
Directory of Open Access Journals |
