Surface passivation of random alloy AlGaAsSb avalanche photodiode

Bibliographic Details
Title: Surface passivation of random alloy AlGaAsSb avalanche photodiode
Authors: Peng Cao, Hongling Peng, Tiancai Wang, Vibha Srivastava, Manoj Kesaria, Minghui You, Qiandong Zhuang, Wanhua Zheng
Source: Electronics Letters, Vol 59, Iss 18, Pp n/a-n/a (2023)
Publisher Information: Wiley, 2023.
Publication Year: 2023
Collection: LCC:Electrical engineering. Electronics. Nuclear engineering
Subject Terms: avalanche photodiodes, passivation, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
More Details: Abstract AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by conformal coating of Al2O3 via atomic layer deposition (ALD). The dark currents of the APDs with 400‐µm diameter (dry etched) at 90% breakdown voltage (0.9 Vbr) are (5.5 ± 0.5) × 10−5 A, (2.1 ± 0.4) × 10−5 A, and (6.2 ± 0.8) × 10−7 A for non‐passivated, Si3N4 passivated, and Al2O3 passivated devices, respectively. The dark current at a gain of 10 for the Al2O3 passivated device is 1 × 10−8 A which is comparable to the reported value for 100‐µm diameter mesa diodes passivated by SU‐8. Maximum gain values of 6, 12, and 35 were obtained for non‐passivated, Si3N4 passivated, and Al2O3 passivated devices, respectively. Moreover, punch‐through capacitance of 8 pF in a spectral response of 450 to 850 nm was obtained. Thus, Al2O3 passivation can be the best solution for antimonide optoelectronic devices.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 1350-911X
0013-5194
Relation: https://doaj.org/toc/0013-5194; https://doaj.org/toc/1350-911X
DOI: 10.1049/ell2.12956
Access URL: https://doaj.org/article/8e401217b57c491e8dfb5cb8a54962a8
Accession Number: edsdoj.8e401217b57c491e8dfb5cb8a54962a8
Database: Directory of Open Access Journals
More Details
ISSN:1350911X
00135194
DOI:10.1049/ell2.12956
Published in:Electronics Letters
Language:English